| 半导体材料生产排放污染物对活性污泥酶活性的影响 |
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| 中文关键词 半导体材料 活性污泥 酶活性 |
| 英文关键词 semiconductor sewage activated sludge enzyme activity |
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| 中文摘要 |
| 采用控制MLSC为2000mg/L的静态试验,研究GaAs、Ga3+、In3+、As(V)对活性污泥脱氢酶、脲酶、蛋白酶活性的影响.结果表明,抑制10%脱氢酶、脲酶活性的GaAs浓度分别为80.3mg/gMLSS和29.0mg/g MLSS;抑制10%脱氢酶、脲酶、蛋白酶活性时,Ga3+浓度分别为228.5mg/gMLSS、56.0mg/g MLSS、204mg/g MLSS;In3+浓度则分别为25.4mg/g MLSS、89.0mg/g MLSS、132.4mg/g MLSS;As(V)浓度分别为552.6mg/g MLSS、464.6mg/g MLSS、193.7mg/g MLSS. |
| 英文摘要 |
| By using the static experiments in which MLSS were controled to be 2000 mg/1, the influences of GaAs, Ga (Ⅲ), In(Ⅲ), As(V) on the activities of three enzymes in activated sludge were studied. The results show that the concentrations of GaAs, at which 10% activities of dehydrogenase and urease were inhibited, were 80.3 and 29.0 mg/g MLSS, respectively; the concentrations for Ga (Ⅲ) to produce 10% inhibition influence on the activities of dehydrogenase, urease and protease were 228.5, 56.0 and 204 mg/g MLSS, respectively; while for In(Ⅲ) and As(V), the corresponding concentration were found to be 25.4, 89.0, 132.4 mg/g MLSS and 552.6, 464.6, 193.7 mg/gM LSS, respectively. Among the enzymes, urease is a more sensitive indicator to Ga(Ⅲ)-containing sewage, aad dehydrogenase is a more sensitive indicator to In(Ⅲ)-containing sewage than others. Ga(Ⅲ) and As(V) exerted synchronized inhibiting influence on the enzyme activities of activated sludge. |
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